STPSC806D Datasheet, PDF (1/7 Pages) STMicroelectronics – 600 V power Schottky silicon carbide diode

STPSC806D
600 V power Schottky silicon carbide diode
Features
■ No or negligible reverse recovery
■ Switching behavior independent of
temperature
■ Particularly suitable in PFC boost diode
function
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
A
K
TO-220AC
STPSC806D
Table 1. Device summary
I_F(AV)
V_RRM
T_{j (max)}
Q_{C (typ)}
8A
600 V
175 °C
10 nC
May 2008
Rev 1
1/7
www.st.com
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