STPSC6H12 Datasheet, PDF (1/8 Pages) STMicroelectronics – Robust high-voltage periphery

STPSC6H12
1200 V power Schottky silicon carbide diode
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Features
 High frequency free-wheel / boost diode
 Robust high-voltage periphery
 Ultrafast high voltage switching independent of
temperature
Datasheet - production data
Description
ST's 1200 V high-performance rectifier is
specifically designed to be used in photo-voltaic
inverters or in applications where negligible
switching losses are required.
The STPSC6H12 helps to increase the
application efficiency yield by up to 2% thanks to
its ability to work at high frequency whatever the
temperature.
The central lead of the DPAK package is removed
to meet the IEC60664 and UL 840 standard
requirements for a higher voltage.
These characteristics make it the best-in-class
1200 V diode.
Table 1. Device summary
Symbol
Value
I_F(AV)
V_RRM
T_j (max.)
V_F (6 A, 25 °C) typ.
C_j (300 V) typ.
6A
1200 V
175 °C
1.55 V
30 pF
September 2016
This is information on a product in full production.
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