STPSC2H12 Datasheet, PDF (1/10 Pages) STMicroelectronics – 1200 V power Schottky silicon carbide diode

STPSC2H12
1200 V power Schottky silicon carbide diode
Datasheet - production data
A
K
A
K
TO-220AC
K
K
A
K
DPAK HV 2L
Features
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 Robust high voltage periphery
 Operating Tj from -40 °C to 175 °C
 Low VF
 ECOPACK^®2 compliant
Description
The SiC diode, available in TO-220AC and DPAK
HV, is an ultrahigh performance power Schottky
rectifier. It is manufactured using a silicon carbide
substrate. The wide band-gap material allows the
design of a low VF Schottky diode structure with a
1200 V rating. Due to the Schottky construction,
no recovery is shown at turn-off and ringing
patterns are negligible. The minimal capacitive
turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj(max.)
VF(typ.)
2A
1200 V
175 °C
1.35 V
January 2017
DocID030271 Rev 1
This is information on a product in full production.
1/10
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