STPSC20H12-Y Datasheet, PDF (1/10 Pages) STMicroelectronics – Robust high voltage periphery

STPSC20H12-Y
Automotive grade 1200 V power Schottky silicon carbide diode
Datasheet - production data
A
K
K
K
A
K
TO-220AC
A
NC
D²PAK
Features
 AEC-Q101 qualified
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 Robust high voltage periphery
 PPAP capable
 Operating Tj from -40 °C to 175 °C
 ECOPACK^®2 compliant
Description
The SiC diode, available in TO-220AC and
D²PAK, is an ultrahigh performance power
Schottky rectifier. It is manufactured using a
silicon carbide substrate. The wide band-gap
material allows the design of a low VF Schottky
diode structure with a 1200 V rating. Due to the
Schottky construction, no recovery is shown at
turn-off and ringing patterns are negligible. The
minimal capacitive turn-off behavior is
independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
20 A
VRRM
1200 V
Tj (max.)
175 °C
VF (typ.)
1.35 V
January 2017
DocID029724 Rev 2
This is information on a product in full production.
1/10
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