STPSC20H065CW Datasheet, PDF (1/8 Pages) STMicroelectronics – 650 V power Schottky silicon carbide diode

STPSC20H065C
650 V power Schottky silicon carbide diode
Features
■ No or negligible reverse recovery
■ Switching behavior independent of
temperature
■ Dedicated to PFC applications
■ High forward surge capability
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Datasheet  production data
A1 (1)
A2 (3)
K (2)
A2
A1 ^K
TO-220AB
STPSC20H065CT
A2
K
A1
TO-247
STPSC20H065CW
Table 1. Device summary
Symbol
Value
I_F(AV)
V_RRM
T_j (max)
2 x 10 A
650 V
175 °C
October 2012
This is information on a product in full production.
Doc ID 023605 Rev 2
1/8
www.st.com
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