STPSC20065-Y Datasheet, PDF (1/11 Pages) STMicroelectronics – Automotive 650 V power Schottky silicon carbide diode

STPSC20065-Y
Automotive 650 V power Schottky silicon carbide diode
Datasheet - production data
A
K
K
A
K
TO-220AC
A
K
DO-247
Features
 No reverse recovery charge in application
current range
 Switching behavior independent of
temperature
 Dedicated to PFC applications
 High forward surge capability
 ECOPACK®2 compliant component
 AEC-Q101 qualified
 PPAP capable
 Operating Tj from -40 °C to 175 °C
Description
The SiC diode is a high voltage power Schottky
diode. It is manufactured using a silicon carbide
substrate. The wide band gap material allows the
design of a Schottky diode structure with a 650 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Used as a freewheeling or output rectification
diode, this rectifier will enhance the performance
and form factor of the targeted power supply or
inverter.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
VF (typ.)
20 A
650 V
175 °C
1.30 V
May 2016
DocID029260 Rev 1
This is information on a product in full production.
1/11
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