STPSC15H12-Y Datasheet, PDF (1/8 Pages) STMicroelectronics – Robust high voltage periphery

STPSC15H12-Y
Automotive grade 1200 V power Schottky silicon carbide diode
Datasheet - production data
A
K
K
A
K
TO-220AC
Features
 AEC-Q101 qualified
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 Robust high voltage periphery
 PPAP capable
 Operating Tj from -40 °C to 175 °C
Description
The SiC diode, available in TO-220AC, is an
ultrahigh performance power Schottky rectifier. It
is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of
a low VF Schottky diode structure with a 1200 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
VF (typ.)
15 A
1200 V
175 °C
1.35 V
January 2017
DocID029723 Rev 1
This is information on a product in full production.
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