STPSC12C065-Y Datasheet, PDF (1/8 Pages) STMicroelectronics – High forward surge capability

STPSC12C065-Y
Automotive 650 V power Schottky silicon carbide diode
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72$&
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Features
• No or negligible reverse recovery
• Switching behavior independent of
temperature
• Dedicated to PFC applications
• High forward surge capability
• AEC-Q101 qualified
• PPAP capable
• ECOPACK®2 compliant component
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature and is ideal for automotive
applications.
Especially suited for use as boost diode, this
rectifier will enhance the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1. Device summary
Symbol
Value
I_F(AV)
V_RRM
T_j (max)
12 A
650 V
175 °C
January 2015
This is information on a product in full production.
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