STPSC1206D Datasheet, PDF (1/7 Pages) STMicroelectronics – 600 V power Schottky silicon carbide diode

STPSC1206
600 V power Schottky silicon carbide diode
Features
■ No reverse recovery
■ Switching behavior independent of
temperature
■ Dedicated to PFC boost diode
Description
These diodes are manufactured using silicon
carbide substrate. This wide bandgap material
supports the manufacture of a Schottky diode
structure with a high voltage rating. Such diodes
exhibit no or negligible recovery characteristics.
The recovery characteristics are independent of
the temperature.
Using these diodes will significantly reduce the
switching power losses of the associated MOS-
FET, and thus increase the efficiency of the
overall application. These diodes will then
outperform the power factor correction circuit
operating in hard switching conditions.
A
K
TO-220AC
STPSC1206D
Table 1. Device summary
I_F(AV)
V_RRM
T_{j (max)}
Q_{C (typ)}
12 A
600 V
175 °C
12 nC
September 2009
Doc ID 16288 Rev 1
1/7
www.st.com
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