STPSC10H065-Y Datasheet, PDF (1/11 Pages) STMicroelectronics – Dedicated to PFC applications

STPSC10H065-Y
Automotive 650 V power Schottky silicon carbide diode
Datasheet - production data
A
K
K
K
A
K
TO-220AC
A
NC
D²PAK
Features
 AEC-Q101 qualified
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 Dedicated to PFC applications
 High forward surge capability
 PPAP capable
 ECOPACK^®2 compliant component
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
10 A
650 V
175 °C
February 2017
DocID026618 Rev 4
This is information on a product in full production.
1/11
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