STPS8L30_06 Datasheet, PDF (1/7 Pages) STMicroelectronics – Low drop power Schottky rectifier

STPS8L30
Low drop power Schottky rectifier
Main product characteristics
I_F(AV)
V_RRM
T_j
V_F(max)
8A
30 V
150° C
0.40 V
Features and benefits
■ Low cost device with low drop forward voltage
for less power dissipation and reduced
heatsink
■ Optimized conduction/reverse losses trade-off
which leads to the highest yield in the
application
■ High power surface mount miniature package
■ Avalanche capability specified
Description
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in DPAK and IPAK, this device is
especially intended for use as a Rectifier at the
secondary of 3.3 V SMPS or DC/DC units.
wheeling and polarity protection applications.
K
A
NC
DPAK
STPS8L30B
Order codes
Part Numbers
STPS8L30B
STPS8L30B-TR
STPS8L30H
K
A
K
NC
IPAK
STPS8L30H
Marking
LS30
LS30
STPS8L30H
Table 1. Absolute Ratings (limiting values)
Symbol
Parameter
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
T_j
dV/dt
Repetitive peak reverse voltage
RMS forward voltage
Average forward current
Surge non repetitive forward current
Peak repetitive reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature ⁽¹⁾
Critical rate of rise of reverse voltage
1.
d----P-----t--o----t
dTj
>
R-----t--h----(^-1--j---–^----a----)
thermal runaway condition for a diode on its own heatsink
T_c = 135° C δ = 0.5
t_p = 10 ms sinusoidal
t_p = 2 µs F = 1 kHz square
t_p = 100 µs square
t_p = 1 µs T_j = 25° C
Value
30
7
8
75
1
2
3000
-65 to + 150
150
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
March 2006
Rev 4
1/7
www.st.com
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