STPS8L30B Datasheet, PDF (1/4 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS8L30B
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
V_RRM
Tj (max)
V_F (max)
8A
30 V
150 °C
0.40 V
FEATURES AND BENEFITS
LOW COST DEVICE WITH LOW DROP FOR-
WARD VOLTAGE FOR LESS POWER
DISSIPATION AND REDUCED HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH LEADS TO THE HIGHEST
YIELD IN THE APPLICATIONS
HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE
2
3
(TAB)
4
4
23
1
NC
DPAK
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequencyDC to DC con-
verters.
Packaged in DPAK, this device is especially in-
tended for use as a Rectifier at the secondary of
3.3V SMPS or DC/DC units.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward current
I_F(AV) Average forward current
Tc = 135°C δ = 0.5
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal
IRRM Repetitive peak reverse current
tp = 2 µs F = 1kHz square
IRSM Non repetitive peak reverse current tp = 100µs square
Tstg Storage temperature range
Tj Maximum junction temperature
dV/dt Critical rate of rise of reverse voltage
Value
30
7
8
75
1
2
- 65 to + 150
150
10000
Unit
V
A
A
A
A
A
°C
°C
V/µs
*
:
dPtot
dTj
<
1
Rth(j−a)
thermal
runaway condition for a diode on its own heatsink
October 1998 - Ed: 4A
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