STPS8H100D Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS8H100D/F/G/G-1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
VRRM
Tj (max)
V_F (max)
8A
100 V
175 °C
0.58 V
FEATURES AND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
DESCRIPTION
Schottky barrier rectifier designed for high fre-
quency compact Switched Mode Power Sup-
plies such as adaptators and on board DC/DC
converters.
ABSOLUTE RATINGS (limiting values)
A
K
TO-220AC
STPS8H100D
A
K
NC
I²PAK
STPS8H100G-1
A
K
ISOWATT220AC
STPS8H100F
K
A
NC
D²PAK
STPS8H100G
Symbol
V_RRM
IF(RMS)
I_F(AV)
IFSM
I_RRM
IRSM
Eas
Iar
T_stg
Tj
dV/dt
Parameter
Value
Repetitive peak reverse voltage
100
RMS forward current
30
Average forward current
δ = 0.5
TO-220AC /
Tc= 165°C
8
I²PAK / D²PAK
ISOWATT220AC Tc = 150°C
Surge non repetitive forward
tp = 10 ms sinusoidal
250
current
Repetitive peak reverse current
tp = 2 µs F = 1kHz square
1
Non repetitive peak reverse current tp = 100 µs square
3
Non repetitive avalanche energy Tj = 25°C L = 60 mH
24
Ias = 2 A
Repetitive avalanche current
Va = 1.5 x VR typ
2
Current decaying linearly
to 0 in 1µs
Frequency limited by Tj max.
Storage temperature range
- 65 to + 175
Maximum operating junction temperature
175
Critical rate of rise of rise voltage
10000
Unit
V
A
A
A
A
A
mJ
A
°C
°C
V/µs
August 1999 - Ed: 4A
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