STPS640CT Datasheet, PDF (1/6 Pages) STMicroelectronics – POWER SCHOTTKY RECTIFIER

®
STPS640CT/CF/CB
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
V_F (max)
2 x3A
40 V
150 °C
0.57 V
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD DROP VOLTAGE
LOW CAPACITANCE
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2000V DC
Capacitance = 12pF
SMD PACKAGE (tape and reel option: -TR)
DESCRIPTION
Dual Schottky rectifier suited to Switch Mode
Power Supplies and other Power Converters.
This device is intended for use in low and medium
voltage operation, and particulary, in high fre-
quency circuitries where low switching losses are
required (free wheeling and polarity protection).
A1
K
A2
K
A2
A1
DPAK
STPS640CB
A2
K
A1
A2
K
A1
TO-220AB
STPS640CT
ISOWATT220AB
STPS640CF
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
TO-220AB / ISOWATT220AB
DPAK
I_F(AV) Average forward current δ = 0.5
TO-220AB
Tc = 135°C
ISOWATT220AB Tc = 130°C
DPAK
Tc = 120°C
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal
IRRM Repetitive peak reverse current
tp = 2 µs F = 1kHz square
T_stg Storage temperature range
Tj Maximum operating junction temperature
dV/dt Critical rate of rise of reverse voltage
Value Unit
40
V
10
A
6
3
A
75
A
1
A
- 65 to + 150 °C
150
°C
10000 V/µs
August 1999 - Ed: 4A
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