STPS61170C Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS61170C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I_F(AV)
V_RRM
T_j
V_F(max)
2 x 30 A
170 V
175 °C
0.67 V
FEATURES AND BENEFITS
■ High junction temperature capability
■ Low leakage current
■ Good trade off between leakage current and
forward voltage drop
■ Low thermal resistance
■ High frequency operation
■ Avalanche specification
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency Switch Mode Power Supply.
Packaged in TO-247, this device is intended for
use to enhance the reliability of the application.
A1
K
A2
A2
K
A1
TO-247
Table 2: Order Code
Part Number
STPS61170CW
Marking
STPS61170CW
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward current
I_F(AV) Average forward current
Tc = 150 °C
δ = 0.5
I_FSM Surge non repetitive forward current
P_ARM Repetitive peak avalanche power
T_stg Storage temperature range
T_j Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
Per diode
Per device
tp = 10 ms sinusoidal
tp = 1 µs Tj = 25 °C
*:
d_----P_-----t_--o_----t
dTj
>
-_R----_t--_h----₍-1--_j--_–-----_a----₎
thermal runaway condition for a diode on its own heatsink
Value
170
80
30
60
500
31800
-65 to + 175
175
10000
Unit
V
A
A
A
W
°C
°C
V/µs
September 2005
REV. 1
1/5