STPS60L15CW Datasheet, PDF (1/4 Pages) STMicroelectronics – LOW DROP OR-ing POWER SCHOTTKY DIODE

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STPS60L15CW
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAJOR PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 30 A
15 V
125°C
0.33 V
FEATURES AND BENEFITS
s VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
s OPERATION JUNCTION TEMPERATURE: 125°C
s REVERSE VOLTAGE SUITED TO OR-ing OF
3V, 5V and 12V RAILS
s AVALANCHE CAPABILITY SPECIFIED
A1
K
A2
A2
K
A1
DESCRIPTION
Dual center tap schottky rectifier packaged in
TO-247 and suited for N+1 redundancy
operations, this device has an optimized forward
voltage drop to reduce the power losses in the
application.
TO-247
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
T_j
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tcase = 115°C Per diode
δ = 0.5
Per device
Surge non repetitive forward
current
tp = 10 ms Sinusoidal
Peak repetitive reverse current
tp = 2µs F = 1kHz
Non repetitive peak reverse current tp = 100µs
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
15
40
30
60
400
2
3
24000
- 65 to + 150
125
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 1A
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