STPS60H100C Datasheet, PDF (1/5 Pages) STMicroelectronics – POWER SCHOTTKY RECTIFIER

®
STPS60H100C
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
T_j
V_F(max)
2 x 30 A
100 V
175°C
0.72 V
FEATURES AND BENEFITS
■ High junction temperature capabiliy
■ Low leakage current
■ Low thermal resistance
■ High frequency operation
■ Avalanche specification
A1
K
A2
K
A2
A1 ^K
TO-220AB
STPS60H100CT
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device com-
bines high current rating and low volume to en-
hance both reliability and power density of the
application.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward voltage
I_F(AV) Average forward current
Tc = 150°C
δ = 0.5
I_FSM Surge non repetitive forward current
P_ARM Repetitive peak avalanche power
T_stg Storage temperature range
T_j Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
Per diode
Per device
tp = 10ms sinusoidal
tp = 1µs Tj = 25°C
*:
d_----P_-----t_--o_----t
dTj
>
R^-----t^--h^----(^-1--j^--–^-----a^----)
thermal runaway condition for a diode on its own heatsink
Value
100
60
30
60
300
18100
-65 to + 175
175
10000
Unit
V
A
A
A
W
°C
°C
V/µs
Order Codes
Part Number
STPS60H100CT
Marking
STPS60H100CT
August 2004
REV. 1
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