STPS40L45CG Datasheet, PDF (1/6 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS40L45CG/CT/CW
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 20 A
45 V
150 °C
0.49 V
FEATURES AND BENEFITS
s LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
s AVALANCHE CAPABILITY SPECIFIED
A1
K
A2
K
A2
A1
D²PAK
STPS40L45CG
DESCRIPTION
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and DC to DC converters.
Packaged in TO-220AB, TO-247 and D²PAK
these devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
A2
K
A1
TO-220AB
STPS40L45CT
A2
K
A1
TO-247
STPS40L45CW
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
V_{RRM Repetitive peak reverse voltage}
45
I_{F(RMS) RMS forward current}
30
I_{F(AV) Average forward current}
Tc = 130°C Per diode
20
δ = 0.5
Per device
40
I_{FSM Surge non repetitive forward current tp = 10 ms Sinusoidal}
230
I_{RRM Repetitive peak reverse current}
tp = 2 µs square F = 1kHz
2
I_{RSM Non repetitive peak reverse current tp = 100 µs square}
3
P_{ARM Repetitive peak avalanche power}
tp = 1µs Tj = 25°C
8100
T_{stg Storage temperature range}
- 65 to + 150
Tj _{Maximum operating junction temperature *}
150
dV/dt _{Critical rate of rise of reverse voltage}
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 4A
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
1/6