STPS40L40CT_03 Datasheet, PDF (1/5 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS40L40CT/CW
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 20 A
40 V
150 °C
0.49 V
FEATURES AND BENEFITS
n LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
n LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
n AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and DC to DC converters.
Packaged in TO-220AB and TO-247 this device is
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
A1
K
A2
A2
K
A1
TO-220AB
STPS40L40CT
A2
K
A1
TO-247
STPS40L40CW
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tc = 130°C Per diode
δ = 0.5
Per device
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
40
30
20
40
230
2
3
8100
- 65 to + 150
150
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 7A
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
1/5