STPS4030CT Datasheet, PDF (1/6 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS4030CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 20 A
30 V
150°C
0.40 V
A1
K
A2
K
FEATURES AND BENEFITS
s VERY SMALL CONDUCTION LOSSES
s NEGLIGIBLE SWITCHING LOSSES
s EXTREMELY FAST SWITCHING
s LOW FORWARD VOLTAGE DROP
HIGHER EFFICIENCY
s LOW THERMAL RESISTANCE
s AVALANCHE CAPABILITY SPECIFIED
FOR
DESCRIPTION
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
Packaged in TO-220AB, D²PAK and I²PAK, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection applications.
A2
A1
D²PAK
STPS4030CG
A2
K
A1
TO-220AB
STPS4030CT
A2
K
A1
I²PAK
STPS4030CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
V_{RRM Repetitive peak reverse voltage}
I_{F(RMS) RMS forward current}
I_F(AV)
I_FSM
Average forward
current
Surge non repetitive forward current
Tc = 130°C Per diode
δ = 0.5
Per device
tp = 10 ms Sinusoidal
I_{RRM Peak repetitive reverse current}
tp=2 µs square F=1kHz
P_{ARM Repetitive peak avalanche power}
T_{stg Storage temperature range}
tp = 1µs Tj = 25°C
Tj _{Maximum operating junction temperature *}
dV/dt _{Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)}
Value
30
32
20
40
220
2
5300
- 65 to + 150
150
10000
Unit
V
A
A
A
A
W
°C
°C
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 2A
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