STPS30150C Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS30150C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj
V_F (max)
2 x 15 A
150 V
175°C
0.75 V
A1
K
A2
K
FEATURES AND BENEFITS
■ HIGH JUNCTION TEMPERATURE CAPABILITY
■ GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
■ LOW LEAKAGE CURRENT
■ INSULATED PACKAGE: TO-220FPAB
Insulating voltage: 2000V DC
Capacitance: 45pF
■ AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power
Supplies.
A2
K
A1
TO-220FPAB
STPS30150CFP
A2
A1
D²PAK
STPS30150CG
A2
K
A1
TO-247
STPS30150CW
A2
A1K
TO-220AB
STPS30150CT
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
V_RRM Repetitive peak reverse voltage
150
I_F(RMS) RMS forward current
30
I_F(AV) Average forward current TO-220FPAB
Tc = 120°C per diode
15
δ = 0.5
TO-220AB/D²PAK Tc = 155°C ^{per device}
TO-247
30
I_FSM Surge non repetitive forward current
tp = 10 ms sinusoidal
220
P_ARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
10500
T_stg Storage temperature range
- 65 to + 175
Tj Maximum operating junction temperature *
175
dV/dt Critical rate of rise of reverse voltage
10000
Unit
V
A
A
A
W
°C
°C
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
February 2004 - Ed: 7
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