STPS2530C Datasheet, PDF (1/5 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS2530C
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I_F(AV)
2 x 12.5 A
V_RRM
30 V
T_j
150°C
V_F(max)
0.45 V
K
FEATURES AND BENEFITS
■ Very small conduction losses
) _{■ Negligible switching losses}
t(s ^{■ Extremely fast switching}
c _{■ Low forward voltage drop for higher efficiency}
du ^{■ Low thermal resistance}
ro _DESCRIPTION
te ^{P Dual Schottky rectifier suited for switch Mode}
Power Supply and high frequency DC to DC con-
le _verters.
so Packaged in D²PAK, this device is intended for
b _{use in low voltage high frequency inverters, free}
O _{wheeling and polarity protection applications.}
A2
A1
D²PAK
Table 2: Order Codes
Part Numbers
STPS2530CG
STPS2530CG-TR
Marking
STPS2530CG
STPS2530CG
t(s) ^{- Table 3: Absolute Ratings (limiting values, per diode)}
c Symbol
Parameter
du ^{VRRM Repetitive peak reverse voltage}
ro ^IF(RMS) ^{RMS forward voltage}
P _{IF(AV) Average forward current Tc = 140°C}
te ^{δ = 0.5}
le I_FSM Surge non repetitive forward current
so ^IRRM ^{Peak repetitive reverse current}
Ob^{IRSM Non repetitive peak reverse current}
Per diode
Per device
t_p = 10ms sinusoidal
t_p = 2 µs square F=1kHz
t_p = 100 µs square
Value
30
30
12.5
25
180
1
2
Unit
V
A
A
A
A
A
P_ARM Repetitive peak avalanche power
t_p = 1µs T_j = 25°C
3000
W
T_stg Storage temperature range
-65 to + 150 °C
T_j Maximum operating junction temperature *
150
°C
dV/dt Critical rate of rise of reverse voltage (rated V_R, T_j = 25°C)
10000
V/µs
* : ^d----^P-----^t--^o----^t > ------------1------------- thermal runaway condition for a diode on its own heatsink
dTj Rth(j – a)
April 2005
REV. 1
1/5