STPS20L45CF Datasheet, PDF (1/9 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS20L45CF/CW/CT/CFP/CG
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 10 A
45 V
150°C
0.5 V
FEATURES AND BENEFITS
s LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
s INSULATED PACKAGE:
TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
ISOWATT220AB,
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifiers designed for
high frequency switched mode power supplies and
DC to DC converters.
These devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
K
A1
K
A2
A2
A1
D²PAK
STPS20L45CG
A2
K
A1
TO-220FPAB
STPS20L45CFP
A2
A1 ^K
TO-220AB
STPS20L45CT
A2
A1 ^K
ISOWATT220AB
STPS20L45CF
A2
K
A1
TO-247
STPS20L45CW
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward TO-220AB / D²PAK
current
TO-247
ISOWATT220AB
TO-220FPAB
Surge non repetitive forward current
Tc = 135°C Per diode
δ = 0.5
Per device
Tc = 115°C Per diode
δ = 0.5
Per device
tp = 10 ms Sinusoidal
Peak repetitive reverse current
tp=2 µs square F=1kHz
Non repetitive peak reverse current
tp = 100 µs square
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
45
30
10
20
10
20
180
1
2
4000
- 65 to + 150
150
10000
Unit
V
A
A
A
A
A
A
W
°C
°C
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 3C
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