STPS20L40CF Datasheet, PDF (1/8 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS20L40CF/CW/CT/CFP
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 10 A
40 V
150°C
0.5 V
A1
K
A2
FEATURES AND BENEFITS
s LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
s INSULATED PACKAGE:
TO-220FPAB
Insulating voltage = 200V DC
Capacitance = 12pF
ISOWATT220AB,
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifiers designed for
high frequency switched mode power supplies and
DC to DC converters.
These devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
A2
K
A1
TO-220FPAB
STPS20L40CFP
A2
A1 ^K
TO-220AB
STPS20L40CT
A2
A1 ^K
ISOWATT220AB
STPS20L40CF
A2
K
A1
TO-247
STPS20L40CW
Symbol
Parameter
Value
V_{RRM Repetitive peak reverse voltage}
40
I_{F(RMS) RMS forward current}
30
I_{F(AV) Average forward}
TO-220AB
Tc = 135°C Per diode
10
current
TO-247
δ = 0.5
Per device
20
ISOWATT220AB Tc = 115°C Per diode
10
TO-220FPAB δ = 0.5
Per device
20
I_{FSM Surge non repetitive forward current}
tp = 10 ms Sinusoidal
180
I_{RRM Peak repetitive reverse current}
tp = 2 µs square F=1kHz
1
I_{RSM Non repetitive peak reverse current}
tp = 100 µs square
2
P_{ARM Repetitive peak avalanche power}
tp = 1µs Tj = 25°C
4000
T_{stg Storage temperature range}
- 65 to + 150
Tj _{Maximum operating junction temperature *}
150
dV/dt _{Critical rate of rise of reverse voltage}
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 4B
Unit
V
A
A
A
A
A
A
W
°C
°C
V/µs
1/8