STPS20L25CT_03 Datasheet, PDF (1/5 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS20L25CT/CG
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 10 A
25 V
150 °C
0.35 V
A1
K
A2
FEATURES AND BENEFITS
n VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
n OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
n AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifier suited to
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB and D²PAK, this device is
especially intended for use as a rectifier at the
secondary of 3.3V SMPS units.
K
A2
K
A1
TO-220AB
STPS20L25CT
A2
A1
D²PAK
STPS20L25CG
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward current
I_F(AV) Average forward current
Tc = 145°C Per diode
δ = 0.5
Per device
I_FSM Surge non repetitive forward current tp = 10 ms Sinusoidal
I_RRM Repetitive peak reverse current
tp=2 µs square F=1kHz
I_RSM Non repetitive peak reverse current tp = 100 µs square
P_ARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
T_stg Storage temperature range
Tj Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
Value
25
30
10
20
220
1
3
5300
- 65 to + 150
150
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed : 4A
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