STPS20L15D_03 Datasheet, PDF (1/5 Pages) STMicroelectronics – LOW DROP OR-ing POWER SCHOTTKY DIODE

®
STPS20L15D/G
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
20 A
15 V
125°C
0.33 V
FEATURES AND BENEFITS
n VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
n REVERSE VOLTAGE SUITED TO OR-ing OF 3V,
5V and 12V RAILS
n AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Packaged in TO-220AC or D²PAK, this device is
especially intended for use as an OR-ing diode in
fault tolerant power supply equipments.
K
K
A
K
A
NC
TO-220AC
STPS20L15D
D²PAK
STPS20L15G
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
V_RRM Repetitive peak reverse voltage
15
I_F(RMS) RMS forward current
30
I_F(AV) Average forward current
Tc = 115°C δ = 1
20
I_FSM Surge non repetitive forward current
tp = 10 ms Sinusoidal
310
I_RRM
I_RSM
P_ARM
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
tp = 2 µs F = 1kHz
tp = 100 µs
tp = 1µs Tj = 25°C
2
3
13500
T_stg Storage temperature range
- 65 to + 150
Tj Maximum operating junction temperature *
125
dV/dt Critical rate of rise of reverse voltage
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
THERMAL RESISTANCES
Symbol
R_{th (j-c)} Junction to case
Parameter
Value
1.6
Unit
°C/W
July 2003 - Ed: 3B
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