STPS20H100CT Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

®
STPS20H100CT/CF/CG/CG-1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj
V_F (max)
2 x 10 A
100 V
175°C
0.64 V
FEATURES AND BENEFITS
n NEGLIGIBLE SWITCHING LOSSES
n HIGH JUNCTION TEMPERATURE CAPABILITY
n GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
n LOW LEAKAGE CURRENT
n AVALANCHE RATED
n INSULATED PACKAGE: ISOWATT220AB
Insulating Voltage = 2000V DC
Capacitance = 45 pF
A1
K
A2
A2
A1 ^K
ISOWATT220AB
STPS20H100CF
A2
A1 ^K
TO-220AB
STPS20H100CT
K
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency miniature Switched Mode
Power Supplies such as adaptators and on
board DC/DC converters.
A2
A1
D²PAK
STPS20H100CG
A2
K
A1
I²PAK
STPS20H100CG-1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward current
I_F(AV) Average forward TO-220AB
Tc = 160°C
current δ = 0.5 D²PAK / I²PAK
per diode
per device
ISOWATT220AB Tc = 145°C
I_FSM Surge non repetitive forward current tp = 10 ms sinusoidal
I_RRM Repetitive peak reverse current
tp = 2 µs square F = 1kHz
I_RSM Non repetitive peak reverse current tp = 100 µs square
T_stg Storage temperature range
Tj Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
Value
Unit
100
V
30
A
10
A
20
250
1
3
- 65 to + 175
175
10000
A
A
A
°C
°C
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
May 2000 - Ed: 3C
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