STPS20H100CR Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

®
STPS20H100CT/CF/CG/CR/CFP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj
V_F (max)
2 x 10 A
100 V
175°C
0.64 V
FEATURES AND BENEFITS
s NEGLIGIBLE SWITCHING LOSSES
s HIGH JUNCTION TEMPERATURE CAPABILITY
s GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
s LOW LEAKAGE CURRENT
s AVALANCHE RATED
s INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating Voltage = 2000V DC
Capacitance = 45 pF
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency miniature Switched Mode
Power Supplies such as adaptators and on
board DC/DC converters.
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
A2
A1 ^K
ISOWATT220AB
STPS20H100CF
A2
K
A1
I²PAK
STPS20H100CR
A2
K
A1
TO-220AB
STPS20H100CT
A2
K
A1
TO-220FPAB
STPS20H100CFP
K
A2
A1
D²PAK
STPS20H100CG
Symbol
Parameter
Value
V_RRM Repetitive peak reverse voltage
100
I_F(RMS) RMS forward current
30
I_F(AV) Average forward TO-220AB
Tc = 160°C
per diode
10
current δ = 0.5 D²PAK / I²PAK
per device
20
ISOWATT220AB Tc = 145°C
TO-220FPAB
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
Tj
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
250
1
3
10800
- 65 to + 175
175
dV/dt Critical rate of rise of reverse voltage
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 4G
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
1/8