STPS2030CT Datasheet, PDF (1/6 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS2030CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 10 A
30 V
150°C
0.40 V
A1
K
A2
K
FEATURES AND BENEFITS
s VERY SMALL CONDUCTION LOSSES
s NEGLIGIBLE SWITCHING LOSSES
s EXTREMELY FAST SWITCHING
s LOW FORWARD VOLTAGE DROP FOR
HIGHER EFFICIENCY
s LOW THERMAL RESISTANCE
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
Packaged in TO-220AB, D²PAK and I²PAK, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
A2
A1
D²PAK
STPS2030CG
A2
K
A1
TO-220AB
STPS2030CT
A2
K
A1
I²PAK
STPS2030CR
Symbol
Parameter
Value
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward
current
Tc = 140°C Per diode
δ = 0.5
Per device
Surge non repetitive forward current
tp = 10 ms Sinusoidal
Peak repetitive reverse current
tp=2 µs square F=1kHz
Non repetitive peak reverse current
tp = 100 µs square
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated V_R, Tj = 25°C)
30
30
10
20
180
1
2
3000
- 65 to + 150
150
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
July 2003 - Ed: 3A
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