STPS20120C_07 Datasheet, PDF (1/9 Pages) STMicroelectronics – Power Schottky rectifier

STPS20120C
Power Schottky rectifier
Main product characteristics
I_F(AV)
V_RRM
T_j(max)
V_F(typ)
2 x 10 A
120 V
175° C
0.54 V
Feature and benefits
■ High junction temperature capability
■ Avalanche rated
■ Low leakage current
■ Good trade-off between leakage current and
forward voltage drop
Description
A1
K
A2
K
A2
A1 ^K
TO-220AB
STPS20120CT
A2
K
A1
TO-220FPAB
STPS20120CFP
A2
K
A1
I²PAK
STPS20120CR
Dual center tap Schottky rectifier suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I²PAK and TO-220FPAB,
this device is intended to be used in notebook and
LCD adaptors, desktop SMPS, providing in these
applications a margin between the remaining
voltages applied on the diode and the voltage
capability of the diode.
Order code
Part Number
STPS20120CT
STPS20120CR
STPS20120CFP
Marking
STPS20120CT
STPS20120CR
STPS20120CFP
Table 1. Absolute ratings (limiting values, per diode)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward current
I_F(AV)
Average forward current,
δ = 0.5
TO-220AB, I²PAK
TO-220FPAB
T_c = 150° C Per diode
T_c = 145° C Per device
T_c = 125° C Per diode
T_c = 100° C Per device
I_FSM Surge non repetitive forward current
t_p = 10 ms Sinusoidal
P_ARM Repetitive peak avalanche power
t_p = 1 µs T_j = 25° C
T_stg Storage temperature range
T_j
Maximum operating junction temperature⁽¹⁾
1.
d----P-----t--o----t
dTj
<
R-----t--h----(^-1--j---–^----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Value
120
30
10
20
10
20
150
4600
-65 to + 175
175
Unit
V
A
A
A
W
°C
°C
May 2007
Rev 2
1/9
www.st.com
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