STPS20100CT Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS20100CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
V_F (max)
2 x 10A
100V
0.7V
Tj (max)
175°C
A1
K
A2
FEATURES
s Negligible switching losses
s Low forward voltage drop
s Low capacitance
s High reverse avalanche surge capability
DESCRIPTION
High voltage dual Schottky rectifier suited for
switchmode power supplies and other power
converters. Packaged in TO-220AB, this device
is intended for use in medium voltage operation,
and particularly, in high frequency circuitries
where low switching losses and low noise are
required.
ABSOLUTE MAXIMUM RATINGS
A2
K
A1
TO-220AB
STP20100CT
Symbol
Parameter
Value
Unit
V_RRM Repetitive peak reverse voltage
100
V
I_F(RMS) RMS forward current
Per diode
30
A
I_F(AV) Average forward current δ = 0.5
Tc=110°C Per diode
10
A
V_R = 60V ^{Per device}
20
A
I_FSM Surge non repetitive forward current tp=10ms Per diode
200
A
sinusoidal
I_RRM Repetitive peak reverse current
tp=2µs
Per diode
1
A
F=1KHz
I_RSM Non repetitive peak reverse current
Tstg Storage temperature range
tp=100µs
Per diode
1
A
- 65 to + 175 °C
Tj
Maximum junction temperature (*)
175
°C
dV/dt Critical rate of rise of reverse voltage
1000
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
August 2002 - Ed:2C
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