STPS1L30MF Datasheet, PDF (1/7 Pages) STMicroelectronics – Low drop power Schottky rectifier in flat package

STPS1L30MF
Low drop power Schottky rectifier in flat package
Main product characteristics
I_F(AV)
V_RRM
T_j (max)
V_F (max)
1A
30 V
150° C
0.39 V
Features and benefits
■ Very low profile package: 0.85 mm
■ Backward compatible with standard STmite
footprint
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Low forward voltage drop for higher efficiency
and extended battery life
■ Low thermal resistance
■ Avalanche capability specified
Order Code
Part number
STPS1L30MF
Marking
F1L3
A
K
STmite flat
(DO222-AA)
Description
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite flat, this device is intended
for use in very low voltage, high frequency
inverters, free wheeling and polarity protection
applications. Due to the very small size of the
package this device fits battery powered
equipment (cellular, notebook, PDA’s, printers) as
well as chargers and PCMCIA cards.
Table 1. Absolute ratings (limiting values)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward voltage
I_F(AV) Average forward current
T_c = 140° C δ = 0.5
I_FSM
Surge non repetitive forward current
t_p = 10 ms sinusoidal
P_ARM Repetitive peak avalanche power
t_p = 1 µs T_j = 25° C
T_stg
Storage temperature range
T_j
Maximum operating junction temperature⁽¹⁾
dV/dt Critical rate of rise of reverse voltage (rated V_R, T_j = 25° C)
1.
d----P-----t--o----t
dTj
<
------------1-------------
Rth(j – a)
condition to avoid thermal runaway for a diode on its own heatsink
Value
30
2
1
50
1200
-65 to + 150
150
10000
Unit
V
A
A
A
W
°C
°C
V/µs
August 2006
Rev 1
1/7
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