STPS1L30 Datasheet, PDF (1/7 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

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STPS1L30
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I_F(AV)
V_RRM
T_j (max)
V_F(max)
1A
30 V
150°C
0.3 V
FEATURES AND BENEFITS
■ Very low forward voltage drop for less power
dissipation
■ Optimized conduction/reverse losses trade-off
which means the highest yield in the
applications
■ Surface mount miniature packages
■ Avalanche capability specified
SMA
(JEDEC DO-214AC)
STPS1L30A
SMB
(JEDEC DO-214AA)
STPS1L30U
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA and SMB, this device is espe-
cially intended for use in parallel with MOSFETs in
synchronous rectification.
Table 2: Order Codes
Part Number
STPS1L30A
STPS1L30U
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward voltage
I_F(AV) Average forward current
T_L = 135°C δ = 0.5
I_FSM Surge non repetitive forward current
tp = 10ms sinusoidal
I_RRM Repetitive peak reverse current
tp = 2µs F = 1kHz square
I_RSM Non repetitive peak reverse current
tp = 100µs square
P_ARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
T_stg Storage temperature range
T_j Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
* : ^d----_dP----_T-^t--^o-_j---^t > _R-----_t--_h----₍-1--_j--_–-----_a----₎ thermal runaway condition for a diode on its own heatsink
Marking
GB3
G23
Value
30
10
1
75
1
1
1500
-65 to + 150
150
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
August 2004
REV. 6
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