STPS16L45CT Datasheet, PDF (1/5 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS16L45CT/CFP
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
2x8A
45 V
150 °C
V_F (max)
0.45 V
FEATURES AND BENEFITS
s LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
s INSULATED PACKAGE: TO-220FPAB
Insulated voltage: 2000V DC
Capacitance: 12 pF
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and high frequency DC to DC converters.
Packaged in TO-220AB and TO-220FPAB, these
devices are intended for use in low voltage, high
frequency converters, free-wheeling and polarity
protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
A2
A1 ^K
TO-220AB
STPS16L45CT
A2
K
A1
TO-220FPAB
STPS16L45CFP
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
Tj
dV/dt
Parameter
Value
Repetitive peak reverse voltage
45
RMS forward current
30
Average forward current
TO-220AB
Tc = 140°C ^{Per diode}
δ = 0.5 _{Per device}
8
16
TO-220FPAB
Tc = 125°C
δ = 0.5
Per diode
Per device
8
16
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
Repetitive peak reverse current
tp=2 µs square F=1kHz
1
Non repetitive peak reverse current
tp = 100 µs square
2
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
4000
Storage temperature range
- 65 to + 150
Maximum operating junction temperature *
150
Critical rate of rise of reverse voltage
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed : 3C
Unit
V
A
A
A
A
A
A
W
°C
°C
V/µs
1/5