STPS16H100CT Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

®
STPS16H100CT/CG/CFP/CR
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2x8A
100 V
175 °C
0.64 V
FEATURES AND BENEFITS
s NEGLIGIBLE SWITCHING LOSSES
s HIGH JUNCTION TEMPERATURE CAPABILITY
s LOW LEAKAGE CURRENT
s GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifier designed for
high frequency miniature Switch Mode Power
Supplies such as adaptators and on board
DC/DC converters.
A1
K
A2
K
A2
A1K
TO-220AB
STPS16H100CT
A2
A1
D²PAK
STPS16H100CG
A2
K
A1
TO-220FPAB
STPS16H100CFP
A2
K
A1
I²PAK
STPS16H100CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward
current δ = 0.5
TO-220AB
Tc = 165°C Per diode
D²PAK / I²PAK
TO-220FPAB Tc = 150°C Per device
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
Non repetitive peak reverse current
tp = 100 µs square
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value Unit
100
V
30
A
8
A
16
200
A
1
A
2
A
8700
W
- 65 to + 175 °C
175
°C
10000 V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 2A
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