STPS160H100TV Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS160H100TV
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2 x 80 A
100 V
150 °C
0.68 V
FEATURES AND BENEFITS
n NEGLIGIBLE SWITCHING LOSSES
n HIGH JUNCTION TEMPERATURE CAPABILITY
n LOW LEAKAGE CURRENT
n GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
n AVALANCHE RATED
n LOW INDUCTION PACKAGE
n INSULATED PACKAGE:
Insulating Voltage = 2500 V_(RMS)
Capacitance = 45 pF
n AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
power converters.
K2
A2
K1
A1
ISOTOP^TM
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
I_RSM
P_ARM
T_stg
Tj
dV/dt
Parameter
Value
Repetitive peak reverse voltage
100
RMS forward current
180
Average forward current
Tc = 110°C
δ = 0.5
Per diode
80
Per device 160
Surge non repetitive forward current tp = 10 ms sinusoidal
1000
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
2
Non repetitive peak reverse current tp = 100 µs square
10
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
78400
Storage temperature range
- 55 to + 150
Maximum operating junction temperature *
150
Critical rate of rise of reverse voltage
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 3A
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