STPS15H100C_06 Datasheet, PDF (1/8 Pages) STMicroelectronics – High voltage power Schottky rectifier

STPS15H100C
High voltage power Schottky rectifier
Main product characteristics
A1
I_F(AV)
V_RRM
T_j (max)
V_F(max)
2 x 7.5 A
100 V
175° C
0.67 V
Features and Benefits
■ Negligible switching losses
■ Low leakage current
■ Good trade off between leakage current and
forward voltage drop
■ Low thermal resistance
■ Avalanche capability specified
Description
Dual center tab Schottky rectifier suited for
switched mode power supply and high frequency
DC to DC converters.
Packaged in DPAK and IPAK, this device is
intended for use in high frequency inverters.
A2
K
A2
A1
STPS15H100CB
DPAK
Table 1. Absolute Ratings (limiting values, per diode)
Symbol
Parameter
V_RRM
I_F(RMS)
I_F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current
T_c = 135° C
δ = 0.5
Per diode
Per device
I_FSM
I_RRM
P_ARM
T_stg
T_j
dV/dt
Surge non repetitive forward current
t_p = 10 ms sinusoidal
Peak repetitive reverse current
t_p = 2 µs square F= 1 kHz
Repetitive peak avalanche power
t_p = 1 µs Tj = 25° C
Storage temperature range
Maximum operating junction temperature ⁽¹⁾
Critical rate of rise of reverse voltage
1.
d----P-----t--o----t
dTj
<
R-----t--h----(^-1--j---–^----a----)
condition to avoid thermal runaway for a diode on its own heatsink
K
K
A2
K
A1
STPS15H100CH
IPAK
Value
100
10
7.5
15
75
1
6600
-65 to + 175
175
10000
Unit
V
A
A
A
A
W
°C
°C
V/µs
June 2006
Rev 4
1/8
www.st.com
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