STPS15H100CB Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

®
STPS15H100CB
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
2 x 7.5 A
100 V
175 °C
V_F (max)
0.67 V
FEATURES AND BENEFITS
s NEGLIGIBLE SWITCHING LOSSES
s LOW LEAKAGE CURRENT
s GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s LOW THERMAL RESISTANCE
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in high frequency inverters.
A1
K
A2
K
A2
A1
DPAK
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
I_RRM
P_ARM
T_stg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tc = 135°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current
tp = 2 µs square F=1kHz
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
Value
100
10
7.5
15
75
1
6600
- 65 to + 175
175
10000
Unit
V
A
A
A
A
W
°C
°C
V/µs
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed : 2A
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