STPS10L45CT Datasheet, PDF (1/7 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS10L45CT/CG/CF/CFP
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
2x5 A
45 V
150°C
0.46 V
FEATURES AND BENEFITS
s LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
s INSULATED PACKAGE:
TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
ISOWATT220AB,
s AVALANCHE CAPABILITY SPECIFIED
A1
K
A2
K
A2
K
A1
TO-220FPAB
STPS10L45CFP
A2
A1
D²PAK
STPS10L45CG
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB and D²PAK, these devices are
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values, per diode)
A2
A1 ^K
TO-220AB
STPS10L45CT
A2
K
A1
ISOWATT220AB
STPS10L45CF
Symbol
Parameter
Value
V_{RRM Repetitive peak reverse voltage}
45
I_{F(RMS) RMS forward current}
20
I_F(AV)
Average
forward current
TO-220AB
D²PAK
Tc =135°C Per diode
δ = 0.5
Per device
5
10
ISOWATT220AB Tc =115°C Per diode
TO-220FPAB
δ = 0.5
Per device
5
10
I_{FSM Surge non repetitive forward current}
tp = 10 ms Sinusoidal
150
I_{RRM Repetitive peak reverse current}
tp = 2 µs square F=1kHz
1
I_{RSM Non repetitive peak reverse current}
tp = 100 µs square
2
P_{ARM Repetitive peak avalanche power}
tp = 1µs Tj = 25°C
2700
T_{stg Storage temperature range}
- 65 to + 150
Tj
Maximum operating junction temperature *
150
dV/dt _{Critical rate of rise of reverse voltage}
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 3B
Unit
V
A
A
A
A
A
A
W
°C
°C
V/µs
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