STPS10L25D Datasheet, PDF (1/5 Pages) STMicroelectronics – LOW DROP POWER SCHOTTKY RECTIFIER

®
STPS10L25D/G
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
10 A
25 V
150 °C
0.35 V
FEATURES AND BENEFITS
n VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
n OPTIMIZED CONDUCTION / REVERSE
LOSSES TRADE-OFF WHICH MEANS THE
HIGHEST EFFICIENCY IN THE APPLICA-
TIONS
n AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters.
This device is especially intended for use as a
rectifier at the secondary of 3.3V SMPS units.
K
A
K
A
NC
TO-220AC
STPS10L25D
D²PAK
STPS10L25G
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) RMS forward current
I_F(AV) Average forward current
Tc = 140°C δ = 0.5
I_FSM Surge non repetitive forward current tp = 10 ms Sinusoidal
I_RRM Repetitive peak reverse current
tp=2 µs square F=1kHz
I_RSM Non repetitive peak reverse current tp = 100 µs square
P_ARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
T_stg Storage temperature range
Tj Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
Value
25
30
10
200
1
3
5500
- 65 to + 150
150
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed : 4B
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
1/5