STPS10H100CT Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS10H100CT/CG/CR/CFP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj
V_F (max)
2x5A
100 V
175°C
0.61 V
A1
A2
K
K
K
FEATURES AND BENEFITS
s HIGH JUNCTION TEMPERATURE CAPABILITY
FOR CONVERTERS LOCATED IN CONFINED
ENVIRONMENT
s LOW LEAKAGE CURRENT AT HIGH
TEMPERATURE
s LOW STATIC AND DYNAMIC LOSSES AS A
RESULT OF THE SCHOTTKY BARRIER
s AVALANCHE CAPABILITY SPECIFIED
A2
A1
D²PAK
STPS10H100CG
A2
K
A1
I²PAK
STPS10H100CR
DESCRIPTION
Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters. Packaged in TO-220AB,
TO-220FPAB, D²PAK and I²PAK.
A2
K
A1
TO-220AB
STPS10H100CT
A2
K
A1
TO-220FPAB
STPS10H100CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
V_RRM Repetitive peak reverse voltage
100
I_F(RMS) RMS forward current
10
I_F(AV) Average forward
TO-220AB
Tc = 165°C per diode
5
current δ = 0.5
D²PAK / I²PAK
per device
10
TO-220FPAB
Tc = 160°C
I_FSM Surge non repetitive forward current
tp = 10 ms sinusoidal
180
I_RRM Repetitive peak reverse current
tp = 2 µs square F = 1kHz
1
P_ARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
7200
T_stg Storage temperature range
- 65 to + 175
Tj Maximum operating junction temperature *
175
dV/dt Critical rate of rise of reverse voltage
10000
* : ^dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a)
July 2003 - Ed: 3F
Unit
V
A
A
A
A
W
°C
°C
V/µs
1/7