STPS10120C Datasheet, PDF (1/8 Pages) STMicroelectronics – Power Schottky rectifier

STPS10120C
Power Schottky rectifier
Table 1. Main product characteristics
I_F(AV)
2x5A
V_RRM
120 V
T_j(max)
175° C
V_F(typ)
0.64 V
A1
K
A2
Feature and benefits
■ High junction temperature capability
■ Good trade-off between leakage current and
forward voltage drop
■ Low leakage current
■ Avalanche capability specified
■ Insulated package
– TO-220FPAB
Insulating voltage = 2000 V
Typical package capacitance 12 pF
Description
Dual center tap Schottky rectifier suited for high
frequency switch mode power supplies.
K
A2
A1 ^K
TO-220AB
STPS10120CT
A2
K
A1
TO-220FPAB
STPS10120CFP
Table 2. Order code
Part number
STPS10120CT
STPS10120CFP
Marking
STPS10120CT
STPS10120CFP
Table 3. Absolute ratings (limiting values, per diode)
Symbol
Parameter
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
P_ARM
T_stg
T_j
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current,
δ = 0.5
TO-220AB
TO-220FPAB
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature⁽¹⁾
Critical rate of rise of reverse voltage
T_c = 160° C Per diode
T_c = 150° C Per device
T_c = 150° C Per diode
T_c = 135° C Per device
t_p = 10 ms Sinusoidal
t_p = 1 µs T_j = 25° C
1.
d----P-----t--o----t
dTj
<
R-----t--h----(^-1--j---–^----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Value
120
30
5
10
5
10
120
3000
-65 to + 175
175
10000
Unit
V
A
A
A
W
°C
°C
V/µs
July 2007
Rev 1
1/8
www.st.com
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