STP9NC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET

STP9NC60
®
STP9NC60FP
N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP
PowerMESH™ ΙΙ MOSFET
TYPE
VDSS
R DS ( o n )
ID
STP9NC60
S T P 9 NC6 0F P
600 V
600 V
< 0.75 Ω
< 0.75 Ω
9.0 A
5.2 A
ν TYPICAL RDS(on) = 0.6 Ω
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν NEW HIGH VOLTAGE BENCHMARK
ν GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first
generation of MESH OVERLAY™ . The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
P ara met er
VDS Drain-source Voltage (VGS = 0)
VDGR
V_GS
I_D
ID
Drain- gate Volt age (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•) Drain Current (pulsed)
P_tot T otal Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W it hst and Voltage (DC)
Tstg Storage Temperature
T_j
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
February 2000
Value
STP9NC60 STP9NC60FP
600
600
± 30
9.0
5 .2
5.7
3 .3
36
36
125
40
1.0
0.32
4.5
4 .5

2000
-65 to 150
150
(1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
V
o_C
o_C
1/9