STP9NB60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

STP9NB60
®
STP9NB60FP
N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P9N B60
ST P9N B60 FP
600 V
600 V
< 0.8 Ω
< 0.8 Ω
9.0 A
9.0 A
s TYPICAL R_DS(on) = 0.7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V _DS
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (cont inuous) at T_c = 25 ^oC
Drain Current (cont inuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating F actor
dv/dt(1) Peak Diode Recovery voltage slope
V_ISO Insulation Withstand Voltage (DC)
T_{s tg} St orage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
January 2000
Value
STP9NB60 STP9NB60FP
600
600
± 30
9.0
9. 0 (* )
5.7
5. 7 (* )
36
36
125
40
1.0
0.32
4.5
4.5

2000
-65 to 150
150
( 1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /^o C
V/ns
V
o_C
o_C
1/9