STP90N6F6 Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate drive power loss

STP90N6F6
N-channel 60 V, 0.0057 Ω typ., 90 A STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Order code
STP90N6F6
VDS
60 V
RDS(on) max.
0.0063 Ω
ID
90 A
PTOT
136 W
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Features
Order code
STP90N6F6
Table 1: Device summary
Marking
Package
90N6F6
TO-220
Packaging
Tube
March 2015
DocID025190 Rev 3
This is information on a product in full production.
1/13
www.st.com