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STP8NM50 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP MDmesh™Power MOSFET | |||
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STP8NM50
STP8NM50FP
N-CHANNEL 500V - 0.7⦠- 8A TO-220/TO-220FP
MDmeshâ¢Power MOSFET
TYPE
VDSS
RDS(on)
ID
STP8NM50
STP8NM50FP
500V
< 0.8â¦
8A
500V
< 0.8â¦
8A
n TYPICAL RDS(on) = 0.7â¦
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh⢠is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Companyâs PowerMESH⢠horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Companyâs proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competitionâs products.
APPLICATIONS
The MDmesh⢠family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
August 2002
Value
STP8NM50 STP8NM50FP
500
500
±30
5
5 (*)
3.1
3.1 (*)
20
20 (*)
120
30
0.4
15
--
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
â65 to 150
°C
(*)Limited only by maximum temperature allowed
1/9
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