STP8NC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh™II MOSFET

STP8NC60
STP8NC60FP
N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP8NC60
STP8NC60FP
600 V < 1.0 Ω
7A
600 V < 1.0 Ω
7A
s TYPICAL R_DS(on) = 0.85Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
July 2001
Value
STP8NC60 STP8NC60FP
600
600
±30
7
7 (*)
4.4
4.4 (*)
28
28 (*)
125
30
1.0
0.24
3.5
-
2500
–65 to 150
150
(1)I_SD ≤7A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
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