STP85NF3LL Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STP85NF3LL
STB85NF3LL-1
N-CHANNEL 30V - 0.006Ω - 85A TO-220/I²PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STP85NF3LL
STB85NF3LL-1
30 V < 0.008 Ω
30 V < 0.008 Ω
85 A
85 A
s TYPICAL R_DS(on) = 0.0075 Ω (@4.5V)
s OPTIMAL R_DS(ON) x Qg TRADE-OFF @4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
3
2
1
123
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique “
Single Feature Size” strip-based process. The re-
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
TO-220
I²PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
March 2001
Value
30
30
± 15
85
60
340
110
0.73
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
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