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| STP80NS04ZB Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET | |||
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STP80NS04ZB
N-CHANNEL CLAMPED 7.5m⦠- 80A TO-220
FULLY PROTECTED MESH OVERLAY⢠MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP80NS04ZB CLAMPED <0.008 ⦠80 A
s TYPICAL RDS(on) = 0.0075 â¦
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175 oC MAXIMUM JUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using the latest
advanced Companyâs Mesh Overlay process which is
based on a novel strip layout.
The inherent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation conditions
such as those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s ABS, SOLENOID DRIVERS
s MOTOR CONTROL
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDG
Drain-gate Voltage
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDG
Drain Gate Current (continuous)
IGS
IDM(â¢)
Gate SourceCurrent (continuous)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate-Source ESD (HBM - C = 100pF, R=1.5 kâ¦)
VESD(G-D) Gate-Drain ESD (HBM - C = 100pF, R=1.5 kâ¦)
VESD(D-S) Drain-source ESD (HBM - C = 100pF, R=1.5 kâ¦)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area.
Value
CLAMPED
CLAMPED
CLAMPED
80
60
± 50
± 50
320
200
1.33
4
4
4
-65 to 175
-40 to 175
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
kV
kV
kV
°C
°C
May 2003
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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