STP80NS04Z Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

®
STP80NS04Z
N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220
FULLY PROTECTED MESH OVERLAY™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STP80NS04Z
CLAMPED <0.008 Ω 80 A
s TYPICAL RDS(on) = 0.0075 Ω
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175 ^oC MAXIMUM JUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.
APPLICATIONS
s ABS, SOLENOID DRIVERS
s MOTOR CONTROL
s DC-DC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
Va l u e
Un it
V DS
V_DG
V_GS
I_D
I_D
I_DG
IGS
I_DM (•)
P_tot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Gate Current (continuous)
G ate Source Current (continuous)
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
C LA M P E D
C LA M P E D
C LA M P E D
80
60
± 50
± 50
320
160
1.06
V
V
V
A
A
mA
mA
A
W
W /^o C
V_ESD(G-S) Gate-Source ESD (HBM - C= 100pF, R=1.5 kΩ)
2
V_ESD(G-D) G ate-Drain ESD (HBM - C= 100pF, R=1.5 kΩ)
4
V_ESD(D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 kΩ)
4
T_{s tg} Storage Temperature
-65 to 175
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
-40 to 175
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
December 1999
kV
kV
kV
o_C
o_C
1/8